Occupational risk factors for sarcoidosis in a multicenter case-control study

…, V Smirnov, S Makhnach, I Hinko, S Vasileuski… - 2020 - Eur Respiratory Soc
Aim: Previous studies of the association of exposure in the workplace with sarcoidosis were
inconsistent. The aim of this analysis was to verify occupational risk factors of sarcoidosis …

High-power InGaAs/InP partially depleted absorber photodiodes for microwave generation

SA Malyshev, AL Chizh, YG Vasileuski - Journal of lightwave …, 2008 - opg.optica.org
A 2-D fully coupled electrothermal physical model of a pin photodiode, which takes into
account external electric circuit, has been developed. Based on numerical simulation, we …

High-speed photodiodes for microwave and millimeter-wave systems

…, A Chizh, Y Vasileuski - 2008 Microwaves, Radar …, 2008 - ieeexplore.ieee.org
The high-speed InGaAs/InP pin photodiodes for microwave generation and frequency up-conversion
in microwave and millimeter-wave systems is discussed. Based on numerical …

Theoretical study of high-speed InGaAs/InP pin photodiodes for microwave generation

…, A Chizh, Y Vasileuski - 2006 International Topical …, 2006 - ieeexplore.ieee.org
Mixed device/circuit physical model of high-speed pin photodiode, which takes into account
self-heating effects and is based on drift-diffusion scheme of charge carrier transport in …

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Y Vasileuski, S Malyshev, A Chizh - Optical and quantum electronics, 2008 - Springer
Abstract Design and characteristics of the guardring-free planar InGaAs/InP avalanche
photodiode are considered based on 2D numerical simulation. The device incorporates n-charge …

Numerical simulation of guardring-free planar InP/InGaAs avalanche photodiode

…, AL Chizh, YG Vasileuski - EUROCON 2007-The …, 2007 - ieeexplore.ieee.org
Theoretical analysis of guardring-free planar InP/InGaAs avalanche photodiode with additional
decoupling p-charge sheet based on 2-D drift-diffusion simulation is presented. Design …

PIN photodiodes for frequency mixing in radio-over-fiber systems

SA Malyshev, AL Chizh - Journal of Lightwave Technology, 2007 - ieeexplore.ieee.org
In this paper, the theory of optoelectronic frequency mixing in pin photodiodes is presented.
The theory is experimentally approved by measurements of InGaAs/InP pin photodiodes that …

Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes

J Xu, X Chen, W Wang, W Lu - Infrared Physics & Technology, 2016 - Elsevier
… In order to separate multiplication layer and p + -region, Vasileuski and Malyshev simulated
InGaAs/InP APDs by incorporating n-charge sheet and p-charge sheet [9]. There are indeed …

[HTML][HTML] Использование макроизгиба оптоволокна в качестве основы для создания датчика массы

ГВ Василевский, АО Зеневич… - Известия высших …, 2020 - cyberleninka.ru
Волоконно-оптические датчики применяются для обнаружения проникновения на
охраняемую территорию. Однако они позволяют выявить только факт пересечения границы, …

[PDF][PDF] FACULTAD DE ARTES MAESTRÍA EN MUSICOLOGÍA

ZM Castillo - 2017 - dspace.ucuenca.edu.ec
La música académica en Ecuador en el actual siglo XXI, segunda década, cuenta con
numerosos compositores, muchos de ellos formados en el extranjero y cuyo desenvolvimiento …