A transistor with compact structures for future MOS devices is discussed. This transistor, whose
gate electrode surrounds the pillar silicon island, reduces the occupied area for all kinds …

A novel transistor with compact structure has been developed for MOS devices. This transistor,
whose gate electrode surrounds the pillar silicon island, reduces the occupied area for all …

For slicing crystalline silicon ingots, we have developed a novel fixed‐abrasive wire where
diamond grit is fixed onto a bare wire by resin bonding. The properties of the wafers sliced …

The M-SGT has a three-dimensional structure, which consists of the source, gate, and drain
arranged vertically. The gate electrode surrounds the crowded multipillar silicon islands. …

… Takato are with Toshiba c/o IBM East Fishkill Facility, Hopewell Junction, NY 12533 USA. …
[6] H. Takato et al., “Impact of surrounding gate transistor (SGT) for ultrahigh-density LSI’s,” …

Objectives To describe the pulmonary CT findings in patients with anti-ARS-antibody-positive
interstitial lung disease (anti-ARS-ILD) Methods The CT findings of 64 patients with anti-…

We report the case of a 52-year-old woman with lung adenocarcinoma treated with EGFR
tyrosine kinase inhibitor (TKI) therapy. After disease progression, histological examination of a …

… Figure 7 shows the current-voltage characteristics per aging time duration (initial, 500 h,
1000 h). As shown, no significant degradation was observed even after 1000 h. The efficiency …

… Peripheral blood examination was as follows: C-reactive protein was 1.1 mg/dl; ESR was
14 mm/1 h. Serum electrolytes, renal function and liver function were normal. Notable …

A novel three-dimensional memory cell called the surrounding gate transistor (SGT) cell has
been developed for 64/256-Mb DRAMs (dynamic RAMs). In the SGT cell structure, a …